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SPW35N60CFD coolmos tm power transistor features ? new revolutionary high voltage technology ? intrinsic fast-recovery body diode ? extremely low reverse recovery charge ? ultra low gate charge ? extreme d v /d t rated ? high peak current capability ? periodic avalanche rated ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =10 a, v dd =50 v 1300 mj avalanche energy, repetitive t ar 2),3) e ar i d =20 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a drain source voltage slope d v /d t i d =34.1 a, v ds =480 v, t j =125 c v/ns reverse diode d v /d t d v /d t v/ns maximum diode commutation speed d i /d t a/s gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c 1 40 value 34.1 21.6 85 20 30 313 -55 ... 150 600 20 80 i s =34.1 a, v ds =480 v, t j =125 c v ds 600 v r ds(on),max 0.118 ? i d 34 a product summary type package ordering code marking SPW35N60CFD pg-to247 q67045a5053 35n60cfd pg-to247 rev. 1.3 page 1 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.4 k/w r thja leaded - - 62 soldering temperature, wave solderin g t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =34.1 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =1.9 ma 345 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c -4-a v ds =600 v, v gs =0 v, t j =150 c - 3300 - gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =21.6 a, t j =25 c - 0.10 0.118 ? v gs =10 v, i d =21.6 a, t j =150 c - 0.23 - gate resistance r g f =1 mhz, open drain - 0.6 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =21.6 a -21-s values thermal resistance, junction - ambient rev. 1.3 page 2 2008-04 -17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 5060 - pf output capacitance c oss - 1400 - reverse transfer capacitance c rss -52- effective output capacitance, energy related 4) c o(er) - 162 - effective output capacitance, time related5 ) c o(tr) - 299 - turn-on delay time t d(on) -20-ns rise time t r -25- turn-off delay time t d(off) -65- fall time t f -12- gate charge characteristics gate to source charge q gs -36-nc gate to drain charge q gd -87- gate charge total q g - 163 212 gate plateau voltage v plateau - 7.2 - v 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 5) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 1) j-std20 and jesd22 2) pulse width t p limited by t j,max values v gs =0 v, v ds =25 v, f =1 mhz v dd =400 v, v gs =10 v, i d =34.1 a, r g =3.3 ? v dd =480 v, i d =34.1 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 1.3 page 3 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current i s - - 34.1 a diode pulse current i s,pulse --85 diode forward voltage v sd v gs =0 v, i f =34.1 a, t j =25 c - 1.0 1.2 v reverse recovery time t rr - 180 - ns reverse recovery charge q rr - 1.5 - c peak reverse recovery current i rrm -16-a typical transient thermal characteristics v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values 5) c th6 models the additional heat capacitance of the package in case of non-ideal cooling. it is not needed if r thca =0 k/w. symbol value unit symbol value unit typ. typ. r th1 0.00441 k/w c th1 0.00037 ws/k r th2 0.00608 c th2 0.00223 r th3 0.0341 c th3 0.00315 r th4 0.0602 c th4 0.0179 r th5 0.0884 c th5 0.098 c th6 4.4 5) rev. 1.3 page 4 2008-04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 100 200 300 400 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 15 30 45 60 75 90 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 1.3 page 5 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =21.9 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] c 25 c 150 0 30 60 90 120 150 0246810 v gs [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 10 20 30 40 50 60 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 0.1 0.2 0.3 0.4 0.5 0 10203040 i d [a] r ds(on) [ ? ] rev. 1.3 page 6 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =34.1 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =10 a; v dd =50 v parameter: t j(start) 0 200 400 600 800 1000 1200 1400 20 60 100 140 180 t j [c] e as [mj] 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 125 c 25 c 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 5 10 15 20 25 t ar [s] i av [a] 120 v 480 v 0 2 4 6 8 10 12 0 50 100 150 200 q gate [nc] v gs [v] rev. 1.3 page 7 2008-04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ); i d =10 ma c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy 16 typ. reverse recovery charge e oss = f (v ds )q rr =f( t j ); i s =34.1 a; d i /d t =100 a/s 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 100 200 300 400 500 v ds [v] c [pf] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 v ds [v] e oss [j] 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 25 50 75 100 125 150 t j [c] q rr [c] rev. 1.3 page 8 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD 17 typ. reverse recovery charge 18 typ. reverse recovery charge q rr =f( i s ); d i/ d t =100 a/s q rr =f(d i /d t ); i s =34.1 a parameter: t j parameter: t j 25 c 125 c 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 35 i s [a] q rr [c] 25 c 125 c 0 1 2 3 4 5 6 7 0 300 600 900 di/ d t [a/s] q rr [c] rev. 1.3 page 9 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD definition of diode switching characteristics rev. 1.3 page 10 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
SPW35N60CFD pg-to247-3-21-41 rev. 1.3 page 11 2008 -04-17 please note the new package dimensions arccording to pcn 2009-134-a
rev. 1.3 page 12 2008 -04-17 SPW35N60CFD please note the new package dimensions arccording to pcn 2009-134-a
data sheet erratum pcn 2009-134-a new package outlines to-247 final data sheet erratum rev. 2.0, 2010-02-01 1 new package outlines to-247 assembly capacity extension for coolmostm technology products assembled in lead-free package pg-to247-3 at subcon tractor ase (weihai) inc., chin a (changes are marked in blue . ) figure 1 outlines to-247, dimensions in mm/inches

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